NXP Semiconductors PMZB670UPE,315 Configuration: Single Continuous Drain Current: - 680 mA Drain-source Breakdown Voltage: - 20 V Factory Pack Quantity: 10000 Gate-source Breakdown Voltage: +/- 8 V Mounting Style: SMD/SMT Package / Case: SOT-883B Power Dissipation: 715 mW Resistance Drain-source Rds (on): 850 mOhms Rohs: yes Transistor Polarity: P-Channel RoHS: yes Drain-Source Breakdown Voltage: - 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 850 mOhms